PART |
Description |
Maker |
W971GG8KB-25-TR |
16M 8 BANKS 8 BIT DDR2 SDRAM
|
Winbond
|
W9751G8KB |
16M x 4 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks 2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
W9751G6JB W9751G6JB-25 |
8M ?4 BANKS ?16 BIT DDR2 SDRAM 8M x 4 BANKS x 16 BIT DDR2 SDRAM
|
http:// Winbond
|
W9725G8JB |
8M ?4 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet 16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
W971GG6JB W971GG6JB25I |
8M ?8 BANKS ?16 BIT DDR2 SDRAM DLL aligns DQ and DQS transitions with clock, Auto Refresh and Self Refresh modes, Write Data Mask
|
Winbond
|
K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
EDE5132BABG-6G-F |
512M bits DDR2 SDRAM 16M X 32 DDR DRAM, 0.45 ns, PBGA128
|
ELPIDA MEMORY INC
|
MBM29F016A-90PFTN MBM29F016A-90PFTR MBM29F016A-12 |
FLASH MEMORY 16M (2M x 8) BIT CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|